Management system and apparatus, method therefor, and device manufacturing method

ABSTRACT

A management apparatus which manages a parameter for an industrial device acquires AGA measurement results obtained by operating the industrial device with an operation job parameter value and non-operation job parameter value. An inspection apparatus acquires an “inspection result” obtained by inspecting the result of operating the industrial device in the operation job. A change in inspection result upon a change in parameter value is estimated on the basis of the AGA measurement result and inspection result. A variable which minimizes (extreme) both or at least one of the sensitivity (slope) of the inspection result upon a change in parameter value and variations (3 σ) in inspection result between objects to be processed (e.g., wafers) is set as an optimal parameter.

FIELD OF THE INVENTION

[0001] The present invention relates to a management system andmanagement method for managing an industrial device and, moreparticularly, to a semiconductor exposure apparatus and control methodtherefor.

BACKGROUND OF THE INVENTION

[0002] Circuit micropatterning and an increase in density require aprojection exposure apparatus for manufacturing a semiconductor deviceto project a circuit pattern formed on a reticle surface onto a wafersurface at a higher resolving power. The circuit pattern projectionresolving power depends on the NA (Numerical Aperture) of a projectionoptical system and the exposure wavelength. The resolving power isincreased by increasing the NA of the projection optical system orshortening the exposure wavelength. As for the latter method, theexposure light source is shifting from g-line to i-line, and furtherfrom i-line to an excimer laser. With the excimer laser, exposureapparatuses having oscillation wavelengths of 248 nm and 193 nm areavailable.

[0003] At present, a VUV (Vacuum Ultra Violet) exposure method with ashorter oscillation wavelength of 157 nm and an EUV (Extreme UltraViolet) exposure method with a wavelength around 13 nm are examined ascandidates for next-generation exposure systems.

[0004] Along with circuit micropatterning, demands have also arisen foraligning at a high precision a reticle on which a circuit pattern isformed and a wafer onto which the circuit pattern is projected. Thenecessary precision is ⅓ the circuit line width. For example, thenecessary precision in a current 180-nm design rule is ⅓, i.e., 60 nm.

[0005] Various device structures have been proposed and examined forcommercial use. With the spread of personal computers and the like,micropatterning has shifted from memories such as a DRAM to CPU chips.For further IT revolution, circuits will be further micropatterned bythe development of MMIC (Millimeter-wave Monolithic Integrated Circuits)and the like used in communication system devices called a home wirelessLAN and Bluetooth, highway traffic systems (ITS: Intelligent TransportSystems) represented by a car radar using a frequency of 77 GHz, andwireless access system LMDSs (Local Multipoint Distribution Services)using a frequency of 24 to 38 GHz.

[0006] There are also proposed various semiconductor devicemanufacturing processes. As a planarization technique which solves aninsufficient depth of the exposure apparatus, the W-CMP (TungstenChemical Mechanical Polishing) process has already been a pasttechnique. Instead, the Cu dual damascene process has received a greatdeal of attention.

[0007] Various semiconductor device structures and materials are used.For example, there are proposed a P-HEMT (Pseudomorphic High ElectronMobility Transistor) and M-HEMT (Metamorphe-HEMT) which are formed bycombining compounds such as GaAs and InP, and an HBT (HeterojunctionBipolar Transistor) using SiGe, SiGeC, and the like.

[0008] Under the present circumstance of the semiconductor industry,many apparatus variables (=parameters) must be set in correspondencewith each exposure method and each product in the use of a semiconductormanufacturing apparatus such as an exposure apparatus. The number ofparameters to be optimized is very large, and these parameters are notindependent of each other but are closely related to each other.

[0009] These parameter values have conventionally been decided by trialand error by the person in charge of a device manufacturer. A long timeis taken to decide optimal parameters. If, e.g., a process error occursafter the parameter values are decided, the parameter values of themanufacturing apparatus must be changed again along with a correspondingchange in manufacturing process. Also in this case, a long time is takento set parameters.

[0010] Parameter values are decided as offsets from the results of anoverlay inspection apparatus that are obtained by exposing severalsend-ahead wafers. Parameter values are optimized without consideringthe sensitivity to process variations.

[0011] In the semiconductor device production, the time which can betaken until the start of volume production after the activation of amanufacturing apparatus is limited. The time which can be taken todecide each parameter value is also limited. In terms of CoO (Cost ofOwnership), the operating time of the manufacturing apparatus must beprolonged. To change a parameter value which has already been decided,it must be quickly changed.

[0012] In this situation, it is very difficult to manufacture varioussemiconductor devices with optimal parameter values. Even amanufacturing apparatus which can originally achieve a high yield canonly exhibit a low yield because the apparatus is used withoutoptimizing parameter values, resulting in a potential decrease in yield.Such decrease in yield leads to a high manufacturing cost, a smallshipping amount, and weak competitiveness.

SUMMARY OF THE INVENTION

[0013] The present invention has been made to overcome the conventionaldrawbacks, and has as its illustrative object to decide whether apredetermined parameter value set in an industrial device is optimalduring volume production by the industrial device, and optimize theparameter value of the industrial device.

[0014] According to the present invention, the foregoing object isattained by providing an industrial device management system comprising:

[0015] an industrial device which operates in accordance with aparameter;

[0016] obtaining means for obtaining evaluation values of operationresult of the industrial device corresponding to a plurality ofparameter values of the parameter;

[0017] holding means for holding the evaluation values obtained by theobtaining means for each object to be processed by the industrialdevice; and

[0018] optimization means for analyzing the evaluation values held bythe holding means, and optimizing the parameter on the basis of at leastone of sensitivity representing a change degree of the evaluation valuesupon the change in the parameter, and a variation amount of theevaluation values for each object to be processed.

[0019] According to another aspect of the present invention, theforegoing object is attained by providing a management method ofmanaging a parameter for an industrial device which operates inaccordance with a parameter, comprising:

[0020] an obtaining step of obtaining evaluation values of operationresult of the industrial device corresponding to a plurality ofparameter values of the parameter;

[0021] a holding step of holding the evaluation value obtained in theobtaining step for each object to be processed by the industrial device;and

[0022] an optimization step of analyzing the evaluation values held inthe holding step, and optimizing the parameter on the basis of at leastone of sensitivity representing a change degree of the evaluation valueupon the change in the parameter value, and a variation amount of theevaluation values for each object to be processed.

[0023] In still another aspect of the present invention, the foregoingobject is attained by providing a management apparatus for managing anindustrial device, comprising:

[0024] communication means for communicating with the industrial devicewhich operates in accordance with a parameter;

[0025] obtaining means for obtaining evaluation values of operationresult of the industrial device corresponding to a plurality ofparameter values of the parameter;

[0026] holding means for holding the evaluation values obtained by theobtaining means for each object to be processed by the industrialdevice; and

[0027] optimization means for analyzing the evaluation values held bythe holding means, and optimizing the parameter on the basis of at leastone of sensitivity representing a change degree of the evaluation valueupon the change in the parameter, and a variation amount of theevaluation values for each object to be processed.

[0028] In still another aspect of the present invention, the foregoingobject is attained by providing an industrial device management methodusing an apparatus connected via communication means to an industrialdevice which operates in accordance with a parameter, comprising:

[0029] an obtaining step of obtaining evaluation values of operationresult of the industrial device corresponding to a plurality of theparameter values of the parameter;

[0030] a holding step of holding an estimation result of the evaluationvalue obtained in the obtaining step for each object to be processed bythe industrial device; and

[0031] an optimization step of analyzing the evaluation values held inthe holding step, and optimizing the parameter on the basis of at leastone of sensitivity representing a change degree of the evaluation valuesupon the change in the parameter, and a variation amount of theevaluation values for each object to be processed.

[0032] Other features and advantages of the present invention will beapparent from the following description taken in conjunction with theaccompanying drawings, in which like reference characters designate thesame or similar parts throughout the figures thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The accompanying drawings, which are incorporated in andconstitute a part of the specification, illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

[0034]FIG. 1 is a view showing an apparatus arrangement according to anembodiment when the present invention is applied to optimization of thealignment parameter value of a semiconductor exposure apparatus;

[0035]FIG. 2A is a flow chart when the present invention is applied tooptimization of the alignment parameter value of the semiconductorexposure apparatus;

[0036]FIG. 2B is a flow chart for explaining processing of an OAP systemaccording to the embodiment;

[0037]FIG. 2C is a view for explaining processing of storing ameasurement result and estimation result in a database according to theembodiment;

[0038]FIG. 3 is a graph showing results (inverted convex) by an overlayinspection apparatus that are plotted as a function of one parametervalue according to the embodiment;

[0039]FIG. 4 is a graph showing results (convex) by the overlayinspection apparatus that are plotted as a function of one parametervalue according to the present invention;

[0040]FIGS. 5A and 5B are graphs for explaining an example (inflectionpoint) of optimizing a parameter value according to the embodiment;

[0041]FIGS. 6A and 6B are graphs for explaining another example(extreme) of optimizing a parameter value according to the embodiment;

[0042]FIG. 7 is a graph for explaining still anther example ofoptimizing a parameter value according to the embodiment;

[0043]FIG. 8 is a graph three-dimensionally showing a method ofoptimizing two parameter values according to the embodiment;

[0044]FIG. 9 is a block diagram for explaining feed forward processingand feedback processing according to the embodiment;

[0045]FIG. 10 is a flow chart for explaining the flow of a devicemanufacturing process;

[0046]FIG. 11 is a flow chart for explaining a wafer process;

[0047]FIG. 12 is a view for explaining the whole arrangement of anexposure apparatus subjected to industrial device management accordingto the embodiment of the present invention;

[0048]FIG. 13 is a block diagram showing the main building components ofan alignment unit 617;

[0049]FIG. 14A is a view showing an alignment mark 14;

[0050]FIG. 14B is a sectional view showing the sectional structure ofthe alignment mark 14;

[0051]FIG. 15 is a chart showing an alignment signal;

[0052]FIG. 16A is a schematic view showing an AGA sample shot layout ona wafer 20;

[0053]FIG. 16B is a schematic plan view showing a mark element 32; and

[0054]FIG. 16C is an enlarged view showing part of the alignment signalin FIG. 15.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0055] A preferred embodiment of the present invention will now bedescribed in detail in accordance with the accompanying drawings.

[0056] An embodiment in which the present invention is applied toalignment of an exposure apparatus will be described in detail withreference to FIGS. 1 and 2. In the following description, of amanagement system according to the embodiment, an alignment variableoptimization system which corresponds to a volume production apparatusand is applied to the alignment system of an exposure apparatus will becalled OAP (Optimization for Alignment Parameter in volume production).Parameter values in this specification include numerical parametervalues which represent numerical values, and values representing settingstates such as setting parameter choice data for selecting a sample shotlayout or alignment method. Variables also include apparatus variationelements such as a choice, and generation conditions, in addition tonumerical values.

[0057]FIG. 1 is a view showing the schematic arrangement of an exposuremanagement system for implementing the OAP system according to theembodiment. In FIG. 1, reference numerals 1 and 2 denote exposureapparatuses which expose an object such as a wafer to a reticle pattern;3, an overlay inspection apparatus which inspects misalignment of theexposure position of a pattern on a wafer which is exposed by theexposure apparatuses 1 and 2 and then developed; 4, a central processingunit (PC/WS) which includes a personal computer or workstation; and 5, adatabase which stores a database of various measurement results(alignment measurement results and the like) by the exposure apparatuses1 and 2, alignment signal processing results, and inspection results bythe overlay inspection apparatus 3.

[0058] A plurality of exposure apparatuses (1 and 2 in FIG. 1), thePC/WS 4 (to be referred to as the PC 4 hereinafter) which accesses thedatabase 5 to realize OAP according to the embodiment, and the overlayinspection apparatus 3 which inspects an alignment result are connectedby, e.g., an in-house LAN 6.

[0059] Details of the exposure apparatus 1 will be explained withreference to FIG. 12. FIG. 12 is a view for explaining the wholearrangement of the exposure apparatus 1 in FIG. 1. The exposureapparatus 1 exposes a wafer 20 to the pattern of a reticle 10.

[0060] In FIG. 12, reference numeral 602 denotes a laser source. Anemitted laser beam serving as exposure light is shaped by anillumination optical system 615, and irradiates the pattern of thereticle 10.

[0061] The reticle 10 is held on a stage 614 which can move in a reticlescanning direction within the x-y plane in FIG. 12. Reference numeral613 denotes a projection system having a predetermined reductionmagnification. The pattern of the reticle 10 illuminated via theillumination optical system 615 is projected onto one shot region of thewafer 20 via the projection system 613, and the wafer 20 is exposed tothe pattern. The wafer 20 is coated with a resist (photosensitiveagent), and a latent image is formed by exposure. The wafer 20 is set ona wafer stage 611 via a wafer chuck 612. Reference numeral 617 denotesan alignment optical system which can detect an alignment mark 14 formedon the wafer 20, as shown in FIGS. 14A and 14B.

[0062] The wafer stage 611 can move the set wafer 20 within the stageplane (x- and y-axis directions), in the vertical direction (z-axisdirection), and in tilt and rotation directions around the respectiveaxes, controlling positioning. By z-axis positioning of the wafer stage611, the projection system 613 is focused on the wafer 20.

[0063] Note that movement and positioning control of the reticle stage614 and wafer stage 611 are based on position information obtained bymeasuring information on the stage position and posture by a sensor (notshown).

[0064] The reticle stage 614 and wafer stage 611 are connected to acontroller 640, and exchange data in real time for sync control. Thelaser source 602 is also connected to the controller 640, and control ofthe emission timing and control synchronized with movement of the stages614 and 611 can be achieved. The controller 640 is connected to the LAN6.

[0065] The principle of measuring the position of an alignment mark byan alignment optical system will be explained with reference to FIG. 13.FIG. 13 is a block diagram showing the main building components of thealignment optical system 617. Illumination light from a light source 918is reflected by a beam splitter 919, passes through a lens 920, andilluminates the alignment mark 14 on the wafer 20. Diffracted light fromthe alignment mark 14 passes through the lens 920, the beam splitter919, and a lens 921, is split by a beam splitter 922, and received byCCD sensors 923 and 924. The alignment mark 14 is enlarged by the lenses920 and 921 at an imaging magnification of about 100, and forms imageson the CCD sensors 923 and 924. The CCD sensors 923 and 924 measure theX and Y positions of the alignment mark 14, respectively. One sensor isrotated through 90° around the optical axis with respect to the othersensor.

[0066] The measurement principle is the same between the X and Ydirections, and X position measurement will be described. The positionmeasurement alignment mark 14 will be explained. As shown in FIG. 14A,the alignment mark 14 in the embodiment is comprised of a plurality of(in FIG. 14A, four) stripe-shaped position detection marks (to be alsoreferred to as “elements” of the alignment mark) 32 which are 4 μm inthe alignment measurement direction (X direction) and 30 μm in thenon-measurement direction (Y direction) and are arrayed in the Xdirection at a preset interval (L=20 μm). As shown in FIG. 14B, thesectional structure of each element 32 is recessed by etching, and theelement 32 is coated with a resist (not shown).

[0067]FIG. 15 shows an alignment signal attained by receiving, by theCCD sensors 923 and 924, reflected light obtained by irradiating aplurality of position detection marks 32 with illumination light andphotoelectrically converting light. Four mark signals shown in FIG. 15undergo proper signal processing, and their element positions (M1, M2,M3, and M4 in an order from the left in FIG. 15) are detected. Theintervals between these elements (L1, L2, and L3 in an order from theleft in FIG. 15) will be called “mark element intervals”.

[0068]FIG. 2A is a flow chart for explaining the processing outline ofOAP according to the embodiment. Assume that a wafer to be exposed isloaded into the exposure apparatus 1, and a corresponding reticle is setin the exposure apparatus 1 (not shown in FIG. 2A). Global alignmentcalled AGA (Advanced Global Alignment) is executed with a parametervalue set for an operation job (parameter value used in alignment foractually performing exposure). A wafer magnification, wafer rotation,and shift amount (all of which will be called AGA data) at this time areobtained (process 11). “AGA” is global alignment for measuring a waferposition depending on the precision of an X-Y stage equipped with alaser interferometer. In AGA, the wafer magnification, wafer rotation,and shift amount of a wafer are obtained, and statistical processingsuch as removal of an abnormal value is executed. “Global Alignment” isan alignment system of moving a wafer stage to an exposure position onthe basis of estimation calculation using position information. AGAmeasurement results which are measured and calculated in process 11 aretransferred as values by data transfer 18 to the PC 4 which controlsOAP. Examples of the parameter value are the line width of an alignmentmark, the illumination mode (center wavelength, wavelength width, and σ)of an alignment optical system, the layout or number of sample shotsused for AGA (shots used to actually measure a position on a wafer), anda combination of them.

[0069] The stage is driven again by using stage driving information(log). AGA measurement is performed using a parameter value other thanthat for the operation job (e.g., the number of sample shots which isset as an operation job parameter value and used for AGA is changed toanother value). A wafer magnification, wafer rotation, and shift amountare obtained (process 12). These AGA data are also transferred as valuesto the PC 4 which controls OAP, similar to the AGA data obtained withthe previous parameter value set for the job (data transfer 18).

[0070] In data transfer 18, these AGA data and all signals (alignmentsignals) concerning an alignment mark detected in AGA are transferred tothe PC 4. A system which transfers an alignment signal to the PC 4 iscalled ADUL (Alignment Data Up Load).

[0071] After all data are obtained in process 12, the exposure apparatus1 performs exposure on the basis of AGA results with a set of parametervalues for the operation job (process 13). Processes 11 to 13 areexecuted in the exposure apparatuses 1 and 2. An exposed wafer isdeveloped by a developing apparatus, and supplied to the overlayinspection apparatus 3 to measure the alignment result (process 14). Theinspection result by the overlay inspection apparatus 3 is transferredto the PC 4 (data transfer 19).

[0072] The PC 4 which has received the AGA data, alignment signals, andthe like from the exposure apparatus by data transfer 18 stores in thedatabase 5 the received AGA data containing the wafer magnification,wafer rotation, and shift amount (process 15). The PC 4 performs anothersignal processing (corresponding to a change in parameter value) for thealignment signal detected in AGA. The PC 4 estimates pseudo AGAmeasurement results, i.e., a wafer magnification, wafer rotation, andshift amount, and stores them in the database (process 15). Anothersignal processing includes a change in processing window width whichrestricts the signal range for use. The inspection result by the overlayinspection apparatus 3 is also transferred to the PC 4 (data transfer19), and registered in the database in correspondence with the AGA datathat have already been stored in the database (process 15).

[0073] OAP processing will be explained with reference to FIG. 2C. ThePC 4 stores, for each job parameter, AGA data and an alignment signalthat are received by data transfer 18, and also stores an inspectionresult received by data transfer 19 (note that inspection result iscommon to all job parameters). For example, as represented by 201 inFIG. 2C, data are stored for job parameter (1), (2), . . . . Forexample, job parameters are (1) the mark line width, (2) theillumination mode, (3) the layout of sample shots used for AGA, and (4)the processing window width.

[0074] In FIG. 2C, 202 represents a data storage state for one jobparameter. AGA data, an alignment signal, and an inspection result arestored for each wafer. As described above, a pseudo AGA measurementresult is stored as an AGA estimation. In this example, a change in AGAdata (e.g., a shift amount) upon successively changing a predeterminedparameter a used for signal processing is estimated, and the result (204in FIG. 2C) is stored. An inspection result, i.e., a change in overlayerror when exposure is executed with the changed parameter value isestimated from these data, and the result (205 in FIG. 2C) is stored.Estimation of the inspection result will be described later.

[0075] AGA measurement values and the inspection result of the overlayinspection apparatus are acquired for a plurality of wafers, and whethera combination of the current job setting parameter values is optimal isdecided (process 16). “Optimal” decision will be described below. Ifanother combination of optimal parameter values exists as a result ofdecision, the combination of optimal parameter values is reflected asjob setting parameter values in the exposure apparatuses 1 and 2 inexposure of lots subsequent to the current lot (process 17 and datatransfer 20).

[0076] By repeating the above processing, a combination of parameters isoptimized and can be used for subsequent lots even upon processvariations.

[0077] The use of the OAP system according to the embodiment canoptimize parameters without examining a special wafer in addition tovolume production. The effective performance of the exposure apparatuscan be improved without decreasing the productivity in volumeproduction.

[0078] Parameters to be optimized in OAP described above include aglobal alignment sample shot layout considering a combination of shot Ato shot L, as shown in FIG. 16A. FIG. 16A is a schematic view showing anexample of an AGA sample shot layout on the wafer 20.

[0079] The parameters also include the width and line width of the markelement 32. The mark element 32 of the alignment mark 14 shown in FIGS.14A and 14B is recessed, but a recent process adopts a mark element 32whose outline only is recessed, in order to eliminate any recess on thewafer surface. For this reason, as shown in FIG. 16B, a mark width ML asthe length of the mark element 32 in the alignment measurementdirection, and a mark line width MLW as the outline width of the markelement 32 can be alignment parameters. FIG. 16B is a schematic planview showing the mark element 32.

[0080] Further, the parameters include an effective signal processingwindow width which restricts the signal band used in alignment signalprocessing, as described above. FIG. 16C is an enlarged view showing aportion M1 of the alignment signal in FIG. 15. The alignment signal isprocessed to obtain alignment results such as the wafer magnification,wafer rotation amount, and shift amount. If an effective signalprocessing window width WW representing a portion obtained as aneffective signal, or a distance (processing window center distance) WCbetween the center of the window and the center of the alignment signalis changed, the obtained wafer magnification, wafer rotation amount, andshift amount are also changed. Hence, the signal processing window widthWW and signal processing window center distance WC can also beparameters.

[0081] OAP processing can be briefly expressed as follows. OAP accordingto the embodiment is a “feed forward” system. That is, AGA data andalignment signals are acquired in both a case wherein a plurality of orone predetermined job parameter value is set to a parameter value forobtaining AGA data actually used for alignment and a case wherein aplurality of or one predetermined job parameter value is set to anotherparameter value. The AGA data are compared with inspection results bythe overlay inspection apparatus, and a more proper parameter value isacquired and can be used for subsequent lots.

[0082] “Feed forward” and opposite “feedback” described in thisspecification will be defined.

[0083] “Feedback” is so-called preprocessing. In “feedback”, severalsend-ahead wafers are supplied before a lot, and subjected to alignmentand exposure to obtain an offset by the overlay inspection apparatus.The result is input as an offset value to the exposure apparatus. Theexposure apparatus uses the offset value to process the remaining wafersin the lot.

[0084] In “feed forward”, no send-ahead wafer is used from the currentlot, but the results of the preceding lot are used by various numericalprocesses. “Feed forward” is proposed in consideration of the situationin which the use of an expensive exposure apparatus with a long Up Timeis superior to preprocessing in terms of CoO. “Feed forward” can beeffectively applied to volume production on the premise that currentlyset parameter values are almost optimal.

[0085]FIG. 9 is a block diagram showing feed forward of an optimalparameter by the OAP system according to the embodiment.

[0086] Reference numerals 1101 to 1105 denote processes for the currentlot in the exposure apparatus 1; and 1121 to 1125, processes for thenext lot in the exposure apparatus 1. In process 1101, wafers are loadedfor each lot. In process 1102, AGA measurement is performed for a waferwhich is extracted from the loaded lot and subjected to exposure,obtaining AGA data (wafer magnification, wafer rotation, and shiftamount). In process 1103, the wafer undergoes exposure processing whilethe reticle and wafer are aligned using the AGA data. The exposureapparatus unloads the exposed wafer (1105), and if an unprocessed waferexists in the lot, repeats AGA measurement and exposure processing forthe next wafer (1104).

[0087] As described above, AGA measurement (1102) is executed with a jobparameter and another parameter. An OAP system 1110 is notified of theobtained alignment signal and AGA data (in this example, the PC 4 isnotified of them).

[0088] The exposed wafer unloaded from the exposure apparatus 1 isdeveloped by a developing apparatus (not shown) (1106), and inspected bythe overlay inspection apparatus (1107). The measurement result by theoverlay inspection apparatus is sent to the PC 4.

[0089] The OAP system 1110 collects AGA measurement results (AGA dataand alignment signals) from the exposure apparatus by AGA datacollection (1111), and stores them in the database 5. Based on thecollected AGA data and alignment signals, a processing algorithm (1112)estimates AGA data when various parameter values are successivelychanged. The estimation results are stored in the database 5. Ininspection data collection (1113), the inspection results of measurement(1107) by the overlay inspection apparatus are collected and stored inthe database 5. In this manner, AGA measurement results and inspectionresults are collected and stored in the database 5 for a single wafer.These data are stored for each wafer in correspondence with the waferID.

[0090] In optimal parameter value setting (1114), overlay inspectionresults upon changing various parameter values are estimated on thebasis of the actually measured and estimated AGA data and measurementresults by the overlay inspection apparatus 3. Optimal parameter valuesare set based on the estimation results.

[0091] The optimal parameter values set in optimal parameter valuesetting 1115 are used as AGA measurement parameter values for each waferof the next lot (feed forward 1115). That is, the exposure apparatusexecutes processes 1121 to 1125 (identical to processes 1101 to 1105)for the next lot. In this AGA measurement, parameter values set byoptimal parameter value setting (1114) are employed.

[0092] In FIG. 9, reference numeral 1116 denotes feedback to bedescribed later.

[0093] OAP processing shown in FIGS. 2A, 2C, and 9 will be explained inmore detail with reference to the flow chart of FIG. 2B.

[0094] As represented by processes 11 and 18, the exposure apparatus 1sets job parameter values, performs AGA measurement with the set jobparameter values, and notifies the PC 4 of the measurement results (AGAdata and an alignment signal) (steps S101 and S102). As represented byprocesses 12 and 18, the exposure apparatus 1 performs AGA measurementwith a set parameter value other than the previously set job parametervalues, and notifies the PC 4 of the measurement results (step S103).

[0095] As represented by process 13, the exposure apparatus 1 performsexposure processing for the wafer by using AGA-data measured by the jobparameter values (step S104). The exposed wafer is unloaded from theexposure apparatus 1, developed (step S105), and transferred to theoverlay inspection apparatus 3. As represented by process 14 and datatransfer 19, the overlay inspection apparatus executes overlayinspection for the transferred wafer (step S106), and notifies the PC 4of the inspection result (step S107).

[0096] As represented by process 15, the PC 4 stores in the database 5the AGA data and alignment signals transferred from the exposureapparatus in steps S102 and S103 (step S201: 202 a and 202 b in FIG.2C). The PC 4 performs, for each transferred alignment signal, signalprocessing (e.g., performs signal processing while successively changingthe signal processing range (window) within a given range). The PC 4estimates an alignment measurement result upon changing the parametervalue within a given range, and stores the estimation result (AGAestimation value) in the database 5 (step S202: 202 d in FIG. 2C). ThePC 4 receives the measurement result transmitted from the overlayinspection apparatus 3 in step S107, and stores it in the database 5(step S203: 202 c in FIG. 2C). By these processes, AGA data, analignment signal, and an AGA estimation value represented by 202 in FIG.2C are stored in correspondence with a job parameter value and a waferID 202 f. Note that the wafer ID is transferred from the exposureapparatus together with AGA data and alignment signals in steps S102 andS103. Also in step S107, the wafer ID is transferred from the overlayinspection apparatus 3 together with an inspection result.

[0097] A predicted measurement value by the overlay inspection apparatusupon successively changing the parameter within a given range iscalculated and acquired using data stored in steps S201 to S203 (stepS204). The acquired value is stored as an inspection result estimationvalue 202 e in 202 of FIG. 2C in correspondence with the job parameterset and wafer ID. An optimal parameter is decided by using predictedmeasurement values acquired for a plurality of wafers (step S205). Ifthe decided parameter is different from the currently used parameter, itis determined that the parameter must be changed, and the exposureapparatus is notified of the decided parameter (steps S206 and S207).That is, whether the current parameter setting is optimal is decided,and if the parameter must be changed, the changed parameter is reflectedin subsequent lots (feed forward processing) (process 17 and datatransfer 20).

[0098] Note that determination of whether to change the parameter instep S206 may be executed depending on whether the parameter fallsoutside the optimal parameter range to be described later.

[0099] Optimization of an alignment parameter in process 16 of FIG. 2Awill be exemplified in detail by using one parameter. The parameter inthe following example represents, e.g., “the number (layout) of sampleshots used for AGA, illumination mode, mark line width, or processingwindow width” described above. A method of optimizing one parameter willbe described, but the idea of this method can also be applied tooptimization of a plurality of parameters. Optimization of an alignmentparameter in the embodiment is “to select not a parameter with which theresult by the overlay inspection apparatus is 0 but a parameter withwhich the sensitivity of the result by the overlay inspection apparatusand variations between wafers become minimum (extremes).

[0100] Parameter optimization will be described. FIGS. 3 and 4 aregraphs showing the results of overlay inspection apparatus which areplotted for one parameter. These plotted curves will be brieflyexplained.

[0101] The overlay inspection apparatus obtains only one result with anapparatus job parameter value  in FIGS. 3 and 4 for each wafer.However, a predicted measurement value by the overlay inspectionapparatus can be calculated using an AGA measurement value actuallymeasured with a parameter value (non-apparatus job parameter value)other than an apparatus job parameter value, an AGA measurement value(to be also referred to as a pseudo AGA measurement value hereinafter)pseudo-predicted by, e.g., changing alignment signal calculationprocessing, an AGA measurement result with an apparatus job parametervalue, and an inspection result by the overlay inspection apparatus:

[0102] (predicted measurement value by overlay inspection apparatus withgiven parameter value)=(AGA measurement value with apparatus jobparameter value)+(inspection value by overlay inspection apparatus)−(AGAmeasurement value or pseudo AGA measurement value with non-apparatus jobparameter value)

[0103] Note that the non-apparatus job parameter value is attained bychanging the sample shot layout, illumination mode, mark line width, orthe like from the apparatus job parameter value. In alignment signalcalculation processing, the alignment signal is processed to calculate apseudo AGA measurement value while, e.g., the processing window width issuccessively changed.

[0104] “AGA measurement value with job parameter value” is a measurementresult received in step S201, and corresponds to a point 207 in thegraph shown in FIG. 2C. “Inspection result by overlay inspectionapparatus” is acquired in step S203, and is a shift amount 206 from theAGA measurement value in the graph of FIG. 2C. In the above equation,(AGA measurement value with job parameter value)+(inspection result byoverlay inspection apparatus) corresponds to a point 208 in the graph ofFIG. 2C. “AGA measurement value or pseudo AGA measurement value withnon-apparatus job parameter value” is the actually measuredvalue/estimated value of an AGA measurement value upon successivelychanging a given parameter value, and corresponds to a curve 204 in FIG.2C. This equation therefore provides the estimated value (curve 205 inFIG. 2C) of a measurement value by the overlay inspection apparatus.

[0105] In this way, predicted measurement values by the overlayinspection apparatus are calculated and plotted while the parameter issuccessively changed within a given range. This processing is executedfor a plurality of (in this case, three) wafers, obtaining curves asshown in FIGS. 3 and 4. In this case, the result by the overlayinspection apparatus along the ordinate is, e.g., the offset (shiftamount). However, the result is not limited to this, and may be thewafer magnification or wafer rotation.

[0106] Generally in a region (low-sensitivity region) where the resultby the inspection apparatus hardly varies with respect to changes inparameter value), the result by the inspection apparatus for each waferalso hardly varies. For example, when the prediction result by theoverlay inspection apparatus is plotted with an inverted convex shape asa function of the parameter value, as shown in FIG. 3, an optimalparameter value exists in lower region B regardless of the resultantvalue by the overlay inspection apparatus. That is, even if the resultby the overlay inspection apparatus is 0 or almost 0 in region A, asshown in FIG. 3, the result is stable against variations incorresponding parameter value in region B where the sensitivity of theresult by the inspection apparatus is low or variations between wafersare small. For this reason, an optimal parameter is set from region B.

[0107] When the prediction result by the overlay inspection apparatus isplotted with a convex shape as a function of the parameter value, asshown in FIG. 4, an optimal parameter value exists in upper region Aregardless of the overlay inspection resultant value. That is, even ifthe parameter value in region B is predicted to make the result by theoverlay inspection come close to 0, the parameter value in region Awhere the sensitivity of the result by the inspection apparatus is lowor variations between wafers are small is set as an optimal parametervalue. Accordingly, position measurement and alignment can be executedin a stable state hardly influenced by changes in parameter value overtime and variations in wafer state. The shift between the AGAmeasurement value and an actual wafer position can be corrected bysetting the exposure apparatus such that a misalignment value (e.g.,result in region A by the overlay inspection apparatus) calculated fromthe graph is subtracted as an offset value unique to the apparatus fromthe AGA measurement value to perform position measurement and alignment.

[0108] An optimal parameter region used to determine whether to changethe parameter value in step S206 is a region which has, e.g., an actualextreme as a center and is defined between upper and lower thresholdsobtained by the empirical rule in advance or past data analysis. Thethresholds may be defined for both the sensitivity and variationsbetween wafers, or if they are correlated with each other, defined foronly either of them. If the current parameter value falls outside theoptimal parameter region, the parameter is optimized using a parametervalue with which variations between wafers become smaller in the optimalparameter region.

[0109] In this embodiment, a prediction result as shown in FIG. 3 or 4is obtained for each job parameter when inspection results are predictedfor a plurality of types of parameter values. An optimal parameter valueis obtained for each parameter and selected as a parameter value foruse. This is effective particularly when the correlation between aplurality of types of parameters is weak.

[0110] The point of parameter optimization described above is “to selectnot a value with which the result by the overlay inspection apparatus is0 but a value in a region where both or at least one of variations (3 a)between wafers in result by the overlay inspection apparatus withrespect to the parameter and the sensitivity (slope) of the result bythe overlay inspection apparatus with respect to changes in parametervalue is substantially minimum”. The sensitivity and variations betweenwafers are predicted to tend to increase/decrease at almost the samedegree. In this case, a parameter value in a region where bothvariations between wafers and the sensitivity are regarded to besubstantially minimum is selected. For example, if variations betweenwafers and the sensitivity are minimum in different regions, whichregion is selected is decided depending on the priority of the influenceof variations in the optimal value of each job parameter and theinfluence of variations in status between wafers.

[0111] Several cases wherein the parameter value is optimized in theembodiment will be described with reference to FIGS. 5A, 5B, 6A, and 6B.FIGS. 5A, 5B, 6A, and 6B are graphs showing a case wherein the parametervalue is optimized in region B rather than region A. The point at whichthe parameter value becomes optimal is an inflection point in shapes asshown in FIGS. 5A and 5B. A minimum value in an inverted convex shape asshown in FIG. 6A is a maximum value in a convex shape as shown in FIG.6B.

[0112] A rare case wherein the parameter value is optimized in theembodiment (variations between wafers and the sensitivity become minimumin different regions) will be described.

[0113] In region A of FIG. 7, the sensitivity (slope) of the result bythe overlay inspection apparatus with respect to changes in alignmentparameter value is high, but variations between wafers are small. Inregion B of FIG. 7, the sensitivity of the result by the overlayinspection apparatus with respect to changes in alignment parametervalue is low, but variations between wafers are large. If only oneparameter can cope with such a case, either of regions A and B isselected. In this example, priority is given to “variations betweenwafers are small”, and region A is selected.

[0114] In an environment where feedback of the parameter to the exposureapparatus can be controlled by wafer to wafer, optimization can besatisfactorily realized even if region B is selected as long asvariations between successive wafers are small.

[0115] An example of optimizing two alignment parameter values will beexplained by using the idea of OAP.

[0116]FIG. 8 is a graph showing measurement values by the overlayinspection apparatus that are predicted and three-dimensionally plottedfor a designated number of wafers while the parameter value of anillumination mode serving as a parameter is fixed to illumination mode 1and the values of other parameters 1 and 2 are successively changedoutside the apparatus in process A. Parameters 1 and 2 are, e.g., theprocessing window width and the distance between windows. Themeasurement value by the inspection apparatus is predicted while theseparameter values are successively changed in the central processing unitPC 4. A combination of parameters 1 and 2 actually used for exposure inan apparatus job is (P2,Q5). In FIG. 8, variations between wafers inresults by the overlay inspection apparatus in a given parametercombination are represented by the lengths of double-headed arrows atnecessary portions, and the remaining results are not illustrated fordescriptive convenience.

[0117] Assuming that curve 1 represents results by the overlayinspection apparatus upon changing P at Q=Q5, P=P3 at which variationsbetween wafers are small is selected as an optimal parameter from curve1. Assuming that curve 2 represents results by the overlay inspectionapparatus upon changing Q at P=P3, Q=Q3 at which variations betweenwafers are small is selected as an optimal parameter from curve 2.

[0118] From this, it is revealed that “variations (3σ) between wafers inresults by the overlay inspection apparatus become smallest in acombination (P3,Q3) of parameters 1 and 2”. (P,Q)=(P3,Q3) is selected asoptimal alignment parameters to be fed forward to the next lot. Notethat search for an optimal value is not limited to this. It is alsopossible to, e.g., actually plot a region where the value is small andobtain a combination of optimal parameter values from the region.Decision of an optimal value by three-dimensionally estimating aninspection result is effective especially when the correlation betweenparameters 1 and 2 is high.

[0119] In the above-described embodiment, OAP is applied to “feedforward” to the next lot. OAP in this embodiment is also adopted as asystem for “feedback” to the current lot, as represented by 1116 in FIG.9, as long as “wafer to wafer” control is possible by a high-speed OAPsystem.

[0120] The outline of the above-described embodiment is as follows. Thatis, in the industrial device management system of the embodiment, theindustrial device operates with a parameter value set for an operationjob (apparatus job) and another parameter value, and acquires respective“measurement results”. The inspection apparatus inspects the result ofoperating the industrial device with the operation job parameter value,and acquires an “inspection result”. Which parameter is optimal isdecided on the basis of the obtained “measurement results” and“inspection result”. A variable in a region where both or at least oneof the sensitivity (slope) of the inspection result by the inspectionapparatus with respect to the parameter and variations (3 a) betweenobjects to be processed (e.g., wafers) becomes smaller, and preferablysubstantially minimum (extreme) is decided as an optimal parameterduring decision. The set parameter of the industrial device is changedto the optimal parameter for use.

[0121] In the embodiment, as for a parameter which can be estimatedwithout actually operating the industrial device, minimum data isacquired by the industrial device. After the industrial device isoperated, the measurement result by the industrial device is decided inconsideration of both the estimated result and the result acquired byoperating the industrial device.

[0122] As described above, in wafer alignment parameter optimization OAPfor an exposure apparatus according to the embodiment, an optimalparameter value can be set for each wafer in feedback, or withoutstopping volume production using a send-ahead wafer in feed forward.Even if the subsequent process varies, the parameter can be changed toan optimal one during volume production. In other words, whether theparameter value of the exposure apparatus is optimal can be decidedduring volume production, and the parameter value can be optimized.

[0123] In the above description, the industrial device is an exposureapparatus, the function is wafer alignment, and the criterion is theinspection result by the overlay inspection apparatus. However, thepresent invention is not limited to them.

[0124] For example, the present invention may be applied to a CMPapparatus or the wafer focusing function of an exposure apparatus.

[0125] The exposure apparatus in the above-described embodiment can be asemiconductor exposure apparatus for forming a semiconductor device on awafer serving as a substrate, an exposure apparatus for exposing a glasssubstrate to produce a liquid crystal, an exposure apparatus for formingan integrated circuit on the spherical surface of a sphericalsemiconductor serving as a substrate, or a charged-particle beamexposure apparatus using an electron beam or ion beam as a light source.

[0126] The overlay inspection apparatus serving as an OAP criterion maysimilarly undergo variable optimization using, e.g., a scanning electronmicroscope SEM as a criterion.

[0127] More specifically, when parameter value optimization proposed inthis specification is applied to, e.g., a CMP apparatus, the parameterincludes the number of turns of a pad and the type of pad, and theinspection apparatus serving as a criterion includes a CD-SEM andprofiler. When parameter value optimization is applied to a waferfocusing function, the parameter includes a measurement position withina shot and the type of mark, and the inspection apparatus serving as acriterion includes a CD-SEM.

[0128] The present invention can optimize set parameters in volumeproduction in the use of an industrial device without any long time andhigh cost in addition to volume production. The apparatus can be usedwith high productivity and high apparatus performance. A manufacturingsystem with good CoO can be achieved.

[0129] These system and method can easily optimize, e.g., industrialdevice parameters without decreasing the volume productivity. Theeffective performance of the apparatus can therefore be improved,resulting in high productivity and high yield.

[0130] In the above processing, measurement by an operation job andnon-operation job and measurement by overlay inspection are performedfor all wafers. It is also obvious to those skilled in the art toperform measurement for only a desired wafer ID and optimize parameters.

[0131] The object of the present invention is also achieved when astorage medium which stores software program codes for realizing thefunctions of the above-described embodiment is supplied to a system orapparatus, and the computer (or the CPU or MPU) of the system orapparatus reads out and executes the program codes stored in the storagemedium.

[0132] In this case, the program codes read out from the storage mediumrealize the functions of the above-described embodiment, and the storagemedium which stores the program codes constitutes the present invention.

[0133] The storage medium for supplying the program codes includes afloppy disk, hard disk, optical disk, magnetooptical disk, CD-ROM, CD-R,magnetic tape, nonvolatile memory card, and ROM.

[0134] The functions of the above-described embodiment are realized whenthe computer executes the readout program codes. Also, the functions ofthe above-described embodiment are realized when an OS (OperatingSystem) or the like running on the computer performs part or all ofactual processing on the basis of the instructions of the program codes.

[0135] The functions of the above-described embodiment are also realizedwhen the program codes read out from the storage medium are written inthe memory of a function expansion board inserted into the computer orthe memory of a function expansion unit connected to the computer, andthe CPU of the function expansion board or function expansion unitperforms part or all of actual processing on the basis of theinstructions of the program codes.

[0136] A semiconductor device manufacturing process using theabove-described semiconductor exposure apparatus will be explained. FIG.10 shows the flow of the whole manufacturing process of a semiconductordevice. In step S201 (circuit design), a semiconductor device circuit isdesigned. In step S202 (mask formation), a mask having the designedcircuit pattern is formed. In step S203 (wafer formation), a wafer isformed as a substrate by using a material such as silicon. In step S204(wafer process) called a pre-process, an actual circuit is formed on thewafer by lithography using the prepared mask and wafer. Step S205(assembly) called a post-process is the step of forming a semiconductorchip by using the wafer formed in step S204, and includes an assemblyprocess (dicing and bonding) and packaging process (chip encapsulation).In step S206 (inspection), the semiconductor device manufactured in stepS205 undergoes inspections such as an operation confirmation test anddurability test. After these steps, the semiconductor device iscompleted and shipped (step S207). For example, the pre-process andpost-process are performed in separate dedicated factories, and each ofthe factories receives maintenance by a remote maintenance system.Information for production management and apparatus maintenance iscommunicated between the pre-process factory and the post-processfactory via the Internet or dedicated network.

[0137]FIG. 11 shows the detailed flow of the wafer process. In step S211(oxidation), the wafer surface is oxidized. In step S212 (CVD), aninsulating film is formed on the wafer surface. In step S213 (electrodeformation), an electrode is formed on the wafer by vapor deposition. Instep S214 (ion implantation), ions are implanted in the wafer. In stepS215 (resist processing), a photosensitive agent is applied to thewafer. In step S216 (exposure), the above-mentioned exposure apparatusexposes the wafer to the circuit pattern of a mask, and prints thecircuit pattern on the wafer. In step S217 (developing), the exposedwafer is developed. In step S218 (etching), the resist is etched exceptthe developed resist image. In step S219 (resist removal), anunnecessary resist after etching is removed. These steps are repeated toform multiple circuit patterns on the wafer. The exposure apparatus usedin this process is optimized by the above-described management system,which can prevent degradation over time or the like caused by fixedparameters. Even if a change over time occurs, the exposure apparatuscan be optimized without stopping volume production, increasing thesemiconductor device productivity in comparison with the prior art.

[0138] As has been described above, the present invention can optimize aparameter value set in an industrial device during volume production bythe industrial device.

[0139] As many apparently widely different embodiments of the presentinvention can be made without departing from the spirit and scopethereof, it is to be understood that the invention is not limited to thespecific embodiments thereof except as defined in the claims.

What is claimed is:
 1. An industrial device management systemcomprising: an industrial device which operates in accordance with aparameter; obtaining means for obtaining evaluation values of operationresult of said industrial device corresponding to a plurality ofparameter values of the parameter; holding means for holding theevaluation values obtained by said obtaining means for each object to beprocessed by said industrial device; and optimization means foranalyzing the evaluation values held by said holding means, andoptimizing the parameter on the basis of at least one of sensitivityrepresenting a change degree of the evaluation values upon the change inthe parameter, and a variation amount of the evaluation values for eachobject to be processed.
 2. The system according to claim 1, wherein saidoptimization means decides a set parameter value of the parameter from aregion where the sensitivity and/or the variation amount becomesminimum.
 3. The system according to claim 1, wherein when thesensitivity and/or the variation amount falls outside a predeterminedrange, said optimization means changes a set parameter value of theparameter so as to make the sensitivity and/or the variation amount fallwithin the predetermined range.
 4. The system according to claim 1,wherein said obtaining means estimates and obtains evaluation values. 5.The system according to claim 4, wherein said industrial device performspredetermined measurement processing with a set parameter value of theparameter, and processes the object on the basis of a measurementresult, and the system further comprises an inspection apparatus whichacquires a shift amount of the measurement result obtained by actuallymeasuring a processing result of the object, and outputs the shiftamount as the evaluation value.
 6. The system according to claim 5,wherein the system further comprises acquisition means for actuallymeasuring and/or estimating and acquiring a measurement result when thepredetermined measurement processing is performed with a parameter valueother than the set parameter value, and said obtaining means estimatesthe evaluation values of operation result of said industrial devicecorresponding to the plurality of the parameter values on the basis ofthe measurement result obtained by performing the predeterminedmeasurement processing with the set parameter, the measurement resultacquired by said acquisition means, and the evaluation value obtained bysaid inspection apparatus.
 7. The system according to claim 6, whereinsaid acquisition means includes executing the predetermined measurementprocessing for said industrial device with a parameter value other thanthe set parameter value to acquire a measurement result.
 8. The systemaccording to claim 5, wherein said industrial device includes anexposure apparatus which performs exposure processing for a substrate,and the parameter is used for alignment processing in the exposureapparatus.
 9. The system according to claim 8, wherein said inspectionapparatus includes an overlay inspection apparatus.
 10. The systemaccording to claim 6, wherein said acquisition means estimates themeasurement result of the predetermined measurement processing byprocessing a signal obtained in the predetermined measurement processingwhile changing a parameter value regarding a processing method.
 11. Amanagement method of managing a parameter for an industrial device whichoperates in accordance with a parameter, comprising: an obtaining stepof obtaining evaluation values of operation result of the industrialdevice corresponding to a plurality of parameter values of theparameter; a holding step of holding the evaluation value obtained inthe obtaining step for each object to be processed by the industrialdevice; and an optimization step of analyzing the evaluation values heldin the holding step, and optimizing the parameter on the basis of atleast one of sensitivity representing a change degree of the evaluationvalue upon the change in the parameter value, and a variation amount ofthe evaluation values for each object to be processed.
 12. The methodaccording to claim 11, wherein in the optimization step, a set parametervalue of the parameter is decided from a region where the sensitivityand/or the variation amount becomes minimum.
 13. The method according toclaim 11, wherein in the optimization step, when the sensitivity and/orthe variation amount falls outside a predetermined range, a setparameter value of the parameter is so changed as to make thesensitivity and/or the variation amount fall within the predeterminedrange.
 14. The method according to claim 11, wherein said obtaining stepestimates and obtains the evaluation values.
 15. The method according toclaim 14, wherein the industrial device performs predeterminedmeasurement processing with a set parameter value of the parameter, andprocesses the object on the basis of a measurement result, and a shiftamount of the measurement result obtained by actually measuring aprocessing result of the object by a predetermined inspection apparatusis used as the evaluation value.
 16. The method according to claim 15,wherein the method further comprises an acquisition step of actuallymeasuring and/or estimating and acquiring a measurement result when thepredetermined measurement processing is performed with a parameter valueother than the set parameter value, and in the obtaining step, theevaluation value of the operation result of the industrial devicecorresponding to the plurality of the parameter values are estimated onthe basis of the measurement result obtained by performing thepredetermined measurement processing with the set parameter, themeasurement result acquired in the acquisition step, and the evaluationvalue obtained by the inspection apparatus.
 17. The method according toclaim 16, wherein the acquisition step includes executing thepredetermined measurement processing for the industrial device with aparameter value other than the set parameter value to acquire ameasurement result.
 18. The method according to claim 15, wherein theindustrial device includes an exposure apparatus which performs exposureprocessing for a substrate, and the parameter is used for alignmentprocessing in the exposure apparatus.
 19. The method according to claim18, wherein the inspection apparatus includes an overlay inspectionapparatus.
 20. The method according to claim 16, wherein in theacquisition step, the measurement result of the predeterminedmeasurement processing is estimated by processing a signal obtained inthe predetermined measurement processing while changing a parametervalue regarding a processing method.
 21. A management apparatus formanaging an industrial device, comprising: communication means forcommunicating with the industrial device which operates in accordancewith a parameter; obtaining means for obtaining evaluation values ofoperation result of the industrial device corresponding to a pluralityof parameter values of the parameter; holding means for holding theevaluation values obtained by said obtaining means for each object to beprocessed by the industrial device; and optimization means for analyzingthe evaluation values held by said holding means, and optimizing theparameter on the basis of at least one of sensitivity representing achange degree of the evaluation value upon the change in the parameter,and a variation amount of the evaluation values for each object to beprocessed.
 22. An industrial device management method using an apparatusconnected via communication means to an industrial device which operatesin accordance with a parameter, comprising: an obtaining step ofobtaining evaluation values of operation result of the industrial devicecorresponding to a plurality of the parameter values of the parameter; aholding step of holding an estimation result of the evaluation valueobtained in the obtaining step for each object to be processed by theindustrial device; and an optimization step of analyzing the evaluationvalues held in the holding step, and optimizing the parameter on thebasis of at least one of sensitivity representing a change degree of theevaluation values upon the change in the parameter, and a variationamount of the evaluation values for each object to be processed.
 23. Adevice manufacturing method of manufacturing a device by an industrialdevice managed by a management system defined in claim
 1. 24. A devicemanufacturing method of manufacturing a device by an industrial devicemanaged by a management apparatus defined in claim
 21. 25. Acomputer-readable memory which stores a control program for causing acomputer to operate as a management apparatus defined in claim
 21. 26. Adevice manufacturing method of optimizing a parameter value used in anindustrial device during device production by using a management systemdefined in claim
 1. 27. A manufacturing apparatus wherein apredetermined operation parameter is set by a management method definedin claim
 11. 28. A device manufacturing method of manufacturing a deviceby substrate processing using a manufacturing apparatus defined in claim27.